Spin-coherent dynamics and carrier lifetime in strained Ge1xSnx semiconductors on silicon

S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov, and F. Pezzoli
Phys. Rev. B 99, 035202 – Published 10 January 2019

Abstract

We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.

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  • Received 17 March 2018
  • Revised 21 December 2018

DOI:https://doi.org/10.1103/PhysRevB.99.035202

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

S. De Cesari1, A. Balocchi2,*, E. Vitiello1, P. Jahandar3, E. Grilli1, T. Amand2, X. Marie2, M. Myronov3,†, and F. Pezzoli1,‡

  • 1LNESS and Università degli Studi di Milano-Bicocca, via R. Cozzi 55, I-20125 Milano, Italy
  • 2Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Ave. de Rangueil, 31077 Toulouse, France
  • 3Department of Physics, The University of Warwick, Coventry CV4 7AL, United Kingdom

  • *andrea.balocchi@insa-toulouse.fr
  • m.myronov@warwick.ac.uk
  • fabio.pezzoli@unimib.it

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Issue

Vol. 99, Iss. 3 — 15 January 2019

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